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Excited state biexcitons in monolayer WSe2 driven by vertically grown graphene nanosheets with high-density electron trapping edges.
- Source :
- Frontiers of Physics; Jun2023, Vol. 18 Issue 3, p1-10, 10p
- Publication Year :
- 2023
-
Abstract
- Interface engineering in atomically thin transition metal dichalcogenides (TMDs) is becoming an important and powerful technique to alter their properties, enabling new optoelectronic applications and quantum devices. Interface engineering in a monolayer WSe<subscript>2</subscript> sample via introduction of high-density edges of standing structured graphene nanosheets (GNs) is realized. A strong photoluminescence (PL) emission peak from intravalley and intervalley trions at about 750 nm is observed at the room temperature, which indicated the heavily p-type doping of the monolayer WSe<subscript>2</subscript>/thin graphene nanosheet-embedded carbon (TGNEC) film heterostructure. We also successfully triggered the emission of biexcitons (excited state biexciton) in a monolayer WSe<subscript>2</subscript>, via the electron trapping centers of edge quantum wells of a TGNEC film. The PL emission of a monolayer WSe<subscript>2</subscript>/GNEC film is quenched by capturing the photoexcited electrons to reduce the electron-hole recombination rate. This study can be an important benchmark for the extensive understanding of light—matter interaction in TMDs, and their dynamics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20950462
- Volume :
- 18
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Frontiers of Physics
- Publication Type :
- Academic Journal
- Accession number :
- 161820876
- Full Text :
- https://doi.org/10.1007/s11467-022-1232-8