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A simple route to large scale synthesis of crystalline aSi3N4 nanowires.
- Source :
- Applied Physics A: Materials Science & Processing; 2005, Vol. 80 Issue 5, p1057-1059, 3p
- Publication Year :
- 2005
-
Abstract
- Crystalline aSi<subscript>3</subscript>N<subscript>4</subscript> nanowires were simply prepared by heating a silicon wafer at 1250 °C in a flowing NH<subscript>3</subscript> and N<subscript>2</subscript> atmosphere. The obtained nanowires are straight and uniform with diameters of 30-100 nm and of lengths up to tens of microns. The possible reactions in the synthesis process are discussed. The growth mechanism of the nanowires is vapor-solid (VS) process. [ABSTRACT FROM AUTHOR]
- Subjects :
- NANOWIRES
SILICON
NANOSTRUCTURED materials
SEMICONDUCTOR wafers
SEMICONDUCTORS
Subjects
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 80
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 16184351
- Full Text :
- https://doi.org/10.1007/s00339-003-2359-2