An improved perovskite solar cell employing InxGa1-xAs as an efficient hole transport layer.

The Spiro-OMeTAD is an excellent candidate for application as hole transport material (HTM), but its high hygroscopicity, inclination to crystallize, and fragility to moisture and heat make it unsuitable for solar cells. Thus, it is of interest to investigate other HTM candidates. In this paper, the use of p-type InGaAs as hole transport material (HTM) has been suggested to enhance the performance of perovskite-based solar cells (PSC). The simulation of a hybrid CH₃NH₃PbI₃/InGaAs planar heterojunction perovskite solar cell is performed using the Silvaco ATLAS simulator. In order to confirm the predictability of the proposed simulation methodology, the conventional ITO/TiO₂/MAPbI₃/Spiro-OMeTAD structure is simulated, and shows good coherence with experimental results. The proposed design using InGaAs as HTM outperforms the conventional device in terms of short-circuit current density (J_SC) of 37.2 mA/cm², open-circuit voltage (V_OC) of 1 V, fill factor (FF) of 80% and high value of efficiency. In addition, the findings show that with In content of x = 0.7 the efficiency will improve to reach a value of about 30%. [ABSTRACT FROM AUTHOR]