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Additive effects of CuPcX4-TCNQ on CH3NH3PbI3 perovskite solar cells.

Authors :
Suzuki, Atsushi
Hasegawa, Ryota
Funayama, Kai
Oku, Takeo
Okita, Masanobu
Fukunishi, Sakiko
Tachikawa, Tomoharu
Hasegawa, Tomoya
Source :
Journal of Materials Science: Materials in Electronics; Mar2023, Vol. 34 Issue 7, p1-20, 20p
Publication Year :
2023

Abstract

Fabrication and characterization of methylammonium lead iodide CH<subscript>3</subscript>NH<subscript>3</subscript>PbI<subscript>3</subscript> (MAPbI<subscript>3</subscript>) perovskite solar cells using decaphenylpentacyclosilane (DPPS), metal phthalocyanine complex doped with tetracyanoquinodimethane (TCNQ) as hole-transporting materials were performed. Additive effects of carboxylic acid, amino, or sulfonic acid sodium salt substituted phthalocyanine complex (MPcX<subscript>4</subscript>, M = Cu, Zn, Co, X = COOH, NH<subscript>2</subscript> or SO<subscript>3</subscript>Na) doped with TCNQ on the photovoltaic properties, crystal orientation, morphologies and electronic structure were investigated. Incorporation of DPPS and CuPc(NH<subscript>2</subscript>)<subscript>4</subscript> doped with TCNQ on the perovskite layer promoted the carrier generation and charge transfer, yielding the best performance of conversion efficiency as compared with other cases. The photovoltaic performance depended on the (100) crystal orientation in the perovskite layer. The surface modification and passivation in the perovskite layer supported the photovoltaic performance with stability under air atmosphere. The molecular interaction based on overlap of π-orbital on CuPc(NH<subscript>2</subscript>)<subscript>4</subscript>, TCNQ and the perovskite crystal promoted the charge transfer at the interface between the perovskite layer and hole-transporting layer, improving the photovoltaic performance. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
34
Issue :
7
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
162019858
Full Text :
https://doi.org/10.1007/s10854-023-10001-z