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Investigation of a defect in the β-Ga2O3 substrate material from capacitance transients.
- Source :
- Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Dec2022, Vol. 40 Issue 6, p1-5, 5p
- Publication Year :
- 2022
-
Abstract
- The defect ∼0.8 eV below the conduction band edge of β-Ga<subscript>2</subscript>O<subscript>3</subscript> wide bandgap semiconductor is investigated using the matched Arrhenius-equation projection technique that offers substantial improvement over the conventional deep level transient spectroscopy technique. An experimental technique is developed to extract activation energy E<subscript>a</subscript> and attempt-to-escape frequency ν<subscript>0</subscript> of defects bypassing both the rate-window treatment and the Arrhenius plot. Only raw capacitance transients in the time domain are needed with this technique. The capacitance transients are projected between the temperature and time domains as well as to E<subscript>a</subscript> and ν<subscript>0</subscript> domains. Extraction of E<subscript>a</subscript> and ν<subscript>0</subscript> is accomplished by matching the projected and experimental capacitance transients to each other. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21662746
- Volume :
- 40
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics
- Publication Type :
- Academic Journal
- Accession number :
- 162054144
- Full Text :
- https://doi.org/10.1116/6.0002045