Preparation of Ti-Doped ZnO/Bi 2 O 3 Nanofilm Heterojunction and Analysis of Microstructure and Photoelectric Properties.

Ti-doped ZnO (TZO) and Bi₂O₃ thin films were designed and deposited by magnetron sputtering successively on ITO glass substrate to form a Ti-doped ZnO/Bi₂O₃ (TZO/Bi₂O₃) heterojunction. Microstructure and photoelectric properties of TZO, Bi₂O₃, and TZO/Bi₂O₃ films were tested and characterized. The results showed that TZO film with a hexagonal wurtzite structure was preferentially grown along the crystal plane (002), had a good crystallization state, and was an N-type semiconductor film with high transmittance (90%) and low resistivity (4.68 × 10⁻³ Ω·cm). However, the Bi₂O₃ film sputtered in an oxygen-containing atmosphere and was a polycrystalline film that was preferentially grown along the crystal plane (111). It had a lower crystallization quality than TZO film and was a P-type semiconductor film with low transmittance (68%) and high resistance (1.71 × 10² Ω·cm). The I–V curve of TZO/Bi₂O₃ composite films showed that it had an obvious heterojunction rectification effect, which indicates that the PN heterojunction successfully formed in TZO/Bi₂O₃ films. [ABSTRACT FROM AUTHOR]