Back to Search
Start Over
Tailoring residual stress of flexible Cu2ZnSn(S,Se)4 solar cells by Ga doping for high mechanical endurance.
- Source :
- Journal of Materials Chemistry C; 3/21/2023, Vol. 11 Issue 11, p3778-3787, 10p
- Publication Year :
- 2023
-
Abstract
- Tremendous V<subscript>oc</subscript> deficit and residual stress are the main bottlenecks for efficient and flexible CZTSSe thin film solar cells. For the sake of promoting the mechanical endurance of flexible devices, a convenient and effective strategy for Ga doping is proposed, which can synchronously suppress the defects and tailor the residual stress of CZTSSe. The formed CZTGSSe with a doping concentration of 0.28 mol L<superscript>−1</superscript> presents an optimized heterojunction characteristic with a CBO of −0.30 eV and a released residual stress of −1.87 GPa. Benefitting from the optimum Ga doping concentration with the reduced electrostatic potential fluctuation of 81.18 meV, the ultimately structured device with a PCE of 5.37% is achieved, which can maintain 80% of its original PCE after suffering in a harsh bending environment. The proposed Ga doping strategy may pave a promising way for congener flexible and portable solar cells. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20507526
- Volume :
- 11
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Materials Chemistry C
- Publication Type :
- Academic Journal
- Accession number :
- 162472407
- Full Text :
- https://doi.org/10.1039/d2tc05416g