Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity.

MLA

Yang, Yintang, et al. “Improved Switching Stability in SiNx-Based RRAM by Introducing Nitride Insertion Layer with High Conductivity.” Applied Physics Letters, vol. 122, no. 11, Mar. 2023, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0142897.

APA

Yang, Y., Duan, Y., Gao, H., Qian, M., Guo, J., Yang, M., & Ma, X. (2023). Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity. Applied Physics Letters, 122(11), 1–6. https://doi.org/10.1063/5.0142897

Chicago

Yang, Yintang, Yiwei Duan, Haixia Gao, Mengyi Qian, Jingshu Guo, Mei Yang, and Xiaohua Ma. 2023. “Improved Switching Stability in SiNx-Based RRAM by Introducing Nitride Insertion Layer with High Conductivity.” Applied Physics Letters 122 (11): 1–6. doi:10.1063/5.0142897.