Internal Stresses and Structural Defects in Nanowires.

The sources of internal stresses in nanowires are considered, the model of which is an infinite elastically isotropic cylinder of circular cross section. Sources of internal stresses are defects that have their own distortion (eigenstrain) and are localized either at a point, on a line, on the surface, or in a region inside the nanowire. Relations are given for the elastic fields and energies of some defects in nanowires, including rectilinear (straight) dislocations and disclinations, dislocation loops, and dilatation inclusions. The interaction between sources of internal stresses in an elastic cylinder is analyzed. The role of the found solutions to the problems of solid mechanics in the interpretation of relaxation processes in pentagonal nanowires and hybrid semiconductor nanostructures with radial and axial heterointerfaces is discussed. [ABSTRACT FROM AUTHOR]