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Estimation of Temperature-Dependent Band Parameters for Bi-Doped SnSe with High Thermoelectric Performance.
- Source :
- Ceramics (2571-6131); Mar2023, Vol. 6 Issue 1, p504-513, 10p
- Publication Year :
- 2023
-
Abstract
- Recent studies have revealed the outstanding thermoelectric performance of Bi-doped n-type SnSe. In this regard, we analyzed the band parameters for Sn<subscript>1−x</subscript>Bi<subscript>x</subscript>Se (x = 0.00, 0.02, 0.04, and 0.06) using simple equations and the Single Parabolic Band model. Bi doping suppresses the carrier-phonon coupling while increasing the density-of-states effective mass. The n-type SnSe is known to have two conduction bands converge near 600 K. Bi doping changes the temperature at which the band convergence occurs. When x = 0.04, its weighted mobility maximized near 500 K, which indicated the possible band convergence. The highest zT of the x = 0.04 sample at mid-temperatures (473–573 K) can be attributed to the engineered band convergence via Bi doping. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 25716131
- Volume :
- 6
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Ceramics (2571-6131)
- Publication Type :
- Academic Journal
- Accession number :
- 162746914
- Full Text :
- https://doi.org/10.3390/ceramics6010029