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Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test.
- Source :
- Micromachines; Mar2023, Vol. 14 Issue 3, p587, 13p
- Publication Year :
- 2023
-
Abstract
- Due to material plastic deformation and current leakage at high temperatures, SOI (silicon-on-insulator) and SOS (silicon-on-sapphire) pressure sensors have difficulty working over 500 °C. Silicon carbide (SiC) is a promising sensor material to solve this problem because of its stable mechanical and electrical properties at high temperatures. However, SiC is difficult to process which hinders its application as a high-temperature pressure sensor. This study proposes a piezoresistive SiC pressure sensor fabrication method to overcome the difficulties in SiC processing, especially deep etching. The sensor was processed by a combination of ICP (inductive coupled plasma) dry etching, high-temperature rapid annealing and femtosecond laser deep etching. Static and dynamic calibration tests show that the accuracy error of the fabricated sensor can reach 0.33%FS, and the dynamic signal response time is 1.2 μs. High and low temperature test results show that the developed sensor is able to work at temperatures from −50 °C to 600 °C, which demonstrates the feasibility of the proposed sensor fabrication method. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 14
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 162815827
- Full Text :
- https://doi.org/10.3390/mi14030587