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Fabrication of MoS 2 /C 60 Nanolayer Field-Effect Transistor for Ultrasensitive Detection of miRNA-155.
- Source :
- Micromachines; Mar2023, Vol. 14 Issue 3, p660, 13p
- Publication Year :
- 2023
-
Abstract
- As a major public health issue, early cancer detection is of great significance. A field-effect transistor (FET) based on an MoS<subscript>2</subscript>/C<subscript>60</subscript> composite nanolayer as the channel material enhances device performance by adding a light source, allowing the ultrasensitive detection of cancer-related miRNA. In this work, atomic layer deposition (ALD) was used to deposit MoS<subscript>2</subscript> layer by layer, and C<subscript>60</subscript> was deposited by an evaporation coater to obtain a composite nanolayer with good surface morphology as the channel material of the FET. Based on the good absorption of C<subscript>60</subscript> by blue-violet light, a 405 nm laser was selected to irradiate the channel material, improving the function of FET biosensors. A linear detection window from 10 pM to 1 fM with an ultralow detection limit of 5.16 aM for miRNA-155 was achieved. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 14
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 162815900
- Full Text :
- https://doi.org/10.3390/mi14030660