Correlative microscopy and monitoring of segregation processes in optoelectronic semiconductor materials and devices.

The present work comprises a practical tutorial on the topic of correlative microscopy and its application to optoelectronic semiconductor materials and devices. For the assessment of microscopic structure–property relationships, correlative electron microscopy, combined also with scanning-probe and light microscopy, exhibits a collection of indispensable tools to analyze various material and device properties. This Tutorial describes not only the various microscopy methods but also the specimen preparation in detail. Moreover, it is shown that electron microscopy can serve to monitor phase segregation processes on various length scales in semiconductor nanoparticles and thin films. Algorithms used to extract phase information from high-resolution transmission electron micrographs are explained. [ABSTRACT FROM AUTHOR]