Synthesis and crystal growth of novel layered bismuthides ATM2Bi2 (A=K, Rb, Cs; TM=Zn, Cd), electron‐deficient compounds with the ThCr2Si2 structure.

We report crystal growth and characterization of 4 new ternary layered bismuthides with compositions KZn2Bi2 (I), RbZn2Bi2 (II), RbCd2Bi2 (III), and CsCd2Bi2 (IV) that belong to the vast 122 family of compounds. Single crystals were grown by self‐flux technique and characterized by a combination of powder X‐ray diffraction, scanning electron microscopy, energy‐dispersive X‐ray spectroscopy, and single crystal X‐ray diffraction. All new compounds crystallize in the layered ThCr2Si2 structure type and exhibit the plate‐like morphology with weak bonding between layers. A significant structural difference between ACd2Bi2 and AZn2Bi2 is found and discussed. [ABSTRACT FROM AUTHOR]