A superhydrophobic fluorinated-silica/polyimide nanofiber membrane with ultra-low dielectric constant.

For ultra-large-scale integrated circuits to proceed at a rapid pace, dielectric materials with an ultralow permittivity, excellent mechanical properties, and moisture resistance are highly sought after. Herein, a series of F-SiO₂/PI nanofiber films with an ultralow-k value have been successfully created by coaxial electrospinning and in situ sol–gel techniques, allowing them to be used under moisture conditions. Thanks to the introduction of fluorinated substituents and high porosity, F-SiO₂/PI films exhibited ultralow dielectric constants, less than 1.8 at 1 MHz, and high hydrophobicity with contact angles greater than 145°. In addition, when TEOS was added in quantities ranging from 0.25 to 1.00 ml, F-SiO₂/PI films with dielectric constants of 1.81–2.65 (1 MHz) at 80% R.H., and the water contact angles of 146.1°, 148.0°, 151.9°, and 154.2°, respectively, were obtained, compared to 4.17 of dielectric constant at 80% R.H. and contact angle with water 112.0° for pure PI nanofiber films. In this regard, the F-SiO₂/PI films offered great promise as an insulating material for electronics and microelectronics. [ABSTRACT FROM AUTHOR]