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Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer.
- Source :
- Scientific Reports; 4/11/2023, Vol. 13 Issue 1, p1-10, 10p
- Publication Year :
- 2023
-
Abstract
- Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the unsatisfied endurance characteristics and even the lack of fundamental of behind mechanism. Here, we revealed that the degradation of endurance characteristics of pentacene OFET with poly(2-vinyl naphthalene) (PVN) as charge-storage layer is dominated by the deep hole-traps in PVN by using the photo-stimulated charge de-trapping technique with the fiber-coupled monochromatic-light probes. The depth distribution of hole-traps in PVN film of pentacene OFET is also provided. [ABSTRACT FROM AUTHOR]
- Subjects :
- ORGANIC field-effect transistors
PENTACENE
ELECTRON traps
MEMORY
MONOCHROMATIC light
Subjects
Details
- Language :
- English
- ISSN :
- 20452322
- Volume :
- 13
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Scientific Reports
- Publication Type :
- Academic Journal
- Accession number :
- 163022354
- Full Text :
- https://doi.org/10.1038/s41598-023-32959-w