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On the Laser Generation in Two-Dimensional Materials with Pumping by Quasitrapped Modes.
- Source :
- JETP Letters; Feb2023, Vol. 117 Issue 4, p276-280, 5p
- Publication Year :
- 2023
-
Abstract
- A model has been proposed to describe the laser generation of two-dimensional semiconductor films with near-field pumping by quasitrapped modes excited in dielectric metasurfaces. A metastructure consisting of a Si metasurface coated with a MoTe<subscript>2</subscript> film, where narrow-band resonance of a quasitrapped mode is joined with a broad exciton resonance of a two-dimensional material, has been designed. Threshold conditions for generation in the MoTe<subscript>2</subscript> film with pumping by quasitrapped modes have been determined. The possibility of polarization control of the emission of the proposed metastructure has been demonstrated. [ABSTRACT FROM AUTHOR]
- Subjects :
- SEMICONDUCTOR films
LASERS
EMISSION control
RESONANCE
Subjects
Details
- Language :
- English
- ISSN :
- 00213640
- Volume :
- 117
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- JETP Letters
- Publication Type :
- Academic Journal
- Accession number :
- 163023359
- Full Text :
- https://doi.org/10.1134/S0021364023600076