Back to Search
Start Over
Semi-Supervised Learning for Simultaneous Location Detection and Classification of Mixed-Type Defect Patterns in Wafer Bin Maps.
- Source :
- IEEE Transactions on Semiconductor Manufacturing; May2023, Vol. 36 Issue 2, p220-230, 11p
- Publication Year :
- 2023
-
Abstract
- Identifying the patterns of defective chips in wafer bin maps (WBMs) in semiconductor manufacturing processes is crucial because different defect patterns correspond to different root causes of process failures. Recently, mixed-type defect patterns (i.e., multiple defect patterns in a single wafer) have become increasingly common owing to the increased complexity of semiconductor manufacturing processes. Previous methods for classifying mixed-type defect patterns in WBMs focused on outputting only the class labels of the defect patterns and not their locations, although location information of the defect patterns is useful for tracking the root causes of failure and improving processes. Moreover, most previous methods used only labeled WBM data, although a larger quantity of unlabeled WBM data are more accessible because of the costly process of label annotation. Therefore, in this paper, we propose a semi-supervised learning method for classifying mixed-type defect patterns and detecting their locations simultaneously using both labeled and unlabeled WBM data. The proposed method extends a recent unsupervised object detection method called Attend-Infer-Repeat in a semi-supervised manner to perform object detection and classification simultaneously. The performance of the proposed method is verified using WBM datasets of different sizes. The results demonstrate the effectiveness of the proposed method for classification and location detection. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08946507
- Volume :
- 36
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Semiconductor Manufacturing
- Publication Type :
- Academic Journal
- Accession number :
- 163545851
- Full Text :
- https://doi.org/10.1109/TSM.2023.3264279