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Artifact-Free Microstructures in the Interfacial Reaction between Eutectic In-48Sn and Cu Using Ion Milling.
- Source :
- Materials (1996-1944); May2023, Vol. 16 Issue 9, p3290, 14p
- Publication Year :
- 2023
-
Abstract
- Eutectic In-48Sn was considered a promising candidate for low-temperature solder due to its low melting point and excellent mechanical properties. Both Cu<subscript>2</subscript>(In,Sn) and Cu(In,Sn)<subscript>2</subscript> formation were observed at the In-48Sn/Cu interface after 160 °C soldering. However, traditional mechanical polishing produces many defects at the In-48Sn/Cu interface, which may affect the accuracy of interfacial reaction investigations. In this study, cryogenic broad Ar<superscript>+</superscript> beam ion milling was used to investigate the interfacial reaction between In-48Sn and Cu during soldering. The phase Cu<subscript>6</subscript>(Sn,In)<subscript>5</subscript> was confirmed as the only intermetallic compound formed during 150 °C soldering, while Cu(In,Sn)<subscript>2</subscript> formation was proven to be caused by room-temperature aging after soldering. Both the Cu<subscript>6</subscript>(Sn,In)<subscript>5</subscript> and Cu(In,Sn)<subscript>2</subscript> phases were confirmed by EPMA quantitative analysis and TEM selected area electron diffraction. The microstructure evolution and growth mechanism of Cu<subscript>6</subscript>(Sn,In)<subscript>5</subscript> during soldering were proposed. In addition, the Young's modulus and hardness of Cu<subscript>6</subscript>(Sn,In)<subscript>5</subscript> were determined to be 119.04 ± 3.94 GPa and 6.28 ± 0.13 GPa, respectively, suggesting that the doping of In in Cu<subscript>6</subscript>(Sn,In)<subscript>5</subscript> has almost no effect on Young's modulus and hardness. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 16
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 163687045
- Full Text :
- https://doi.org/10.3390/ma16093290