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Ferroelectric synaptic devices based on CMOS-compatible HfAlOx for neuromorphic and reservoir computing applications.
- Source :
- Nanoscale; 5/14/2023, Vol. 15 Issue 18, p8366-8376, 11p
- Publication Year :
- 2023
Details
- Language :
- English
- ISSN :
- 20403364
- Volume :
- 15
- Issue :
- 18
- Database :
- Complementary Index
- Journal :
- Nanoscale
- Publication Type :
- Academic Journal
- Accession number :
- 163699770
- Full Text :
- https://doi.org/10.1039/d3nr01294h