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Effect of Electron Fluence on the Concentration of Color Centers in Hollow Particles of Aluminum Oxide.

Authors :
Iurina, V. I.
Dudin, A. N.
Neshchimenko, V. V.
Mikhailov, M. M.
Source :
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Feb2023, Vol. 17 Issue 1, p202-207, 6p
Publication Year :
2023

Abstract

The effect of a fluence of electrons with an energy of 30 keV in the range of (1–7) × 10<superscript>16</superscript> cm<superscript>–2</superscript> on the concentration of color centers in micron-sized hollow particles of aluminum oxide is studied in comparison with bulk Al<subscript>2</subscript>O<subscript>3</subscript> microparticles. The analysis is carried out in situ according to diffuse reflection spectra in the range from 250 to 2500 nm. The radiation resistance of the studied microspheres is estimated relative to Al<subscript>2</subscript>O<subscript>3</subscript> microparticles from analysis of the difference spectra of diffuse reflection obtained by subtracting the spectra after irradiation from the spectra of nonirradiated samples. Changes in the difference spectra of diffuse reflection of aluminum-oxide microparticles and microspheres show that with an increase in the electron fluence, the induced absorption increases throughout the entire spectrum. It is established that the radiation resistance of aluminum-oxide microspheres to the action of electrons with an energy of 30 keV at a fluence of (1–7) × 10<superscript>16</superscript> cm<superscript>–2</superscript> is greater than the radiation resistance of Al<subscript>2</subscript>O<subscript>3</subscript> microparticles. An increase in the radiation resistance of hollow aluminum-oxide particles is due to a low concentration of radiation-induced defects in the anion sublattice. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10274510
Volume :
17
Issue :
1
Database :
Complementary Index
Journal :
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques
Publication Type :
Academic Journal
Accession number :
163725156
Full Text :
https://doi.org/10.1134/S1027451023010421