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Memristive computing in Germany.

Authors :
Fey, Dietmar
Source :
IT: Information Technology; May2023, Vol. 65 Issue 1/2, p1-2, 2p
Publication Year :
2023

Abstract

Such behaviour is to observe in non-volatile memory (NVM) elements, e.g., in resistive RAMs (ReRAMs), spin-torque transfer (STT)-MRAMs, phase change memory (PCM)-RAMs or polarization-based ferroelectric RAMs (FeRAM). It was in 1971 when Leon Chua concluded by a plausibility consideration based on symmetry that there should exist a fourth fundamental element in electronics in addition to resistance, capacitance and inductance. These properties include, e.g., a pinched hysteresis curve of the current/voltage waveform, i.e., the curve passes through the point of origin in contrast to a usual hysteresis curve (according to a paper title from Leon Chua "if it's pinched, it's a memristor"). [Extracted from the article]

Details

Language :
English
ISSN :
16112776
Volume :
65
Issue :
1/2
Database :
Complementary Index
Journal :
IT: Information Technology
Publication Type :
Academic Journal
Accession number :
163820740
Full Text :
https://doi.org/10.1515/itit-2023-0017