Q-Band 광대역 저잡음 증폭기 설계.

This study presents a Q-band wideband low-noise amplifier (LNA), which is implemented and verified using a 65-nm bulk CMOS process, for millimeter-wave applications. The proposed low-noise amplifier uses a transformer structure at the input stage to obtain broadband input-matching characteristics. Under 1-V supply voltage, the proto-type LNA achieves a simulated peak gain of 22.74 dB with gain variation of ±0.37 dB in frequency band. The simulated noise figure (NF) was 3.27 dB at 40 GHz while consuming 17 mW. The core occupies an area of 0.13 mm². [ABSTRACT FROM AUTHOR]