Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures.

β-phase gallium oxide (Ga₂O₃) is an emerging ultrawide bandgap (UWBG) semiconductor with a bandgap energy of ∼ 4.8 eV and a predicted high critical electric field strength of ∼8 MV/cm, enabling promising applications in next generation high power electronics and deep ultraviolet optoelectronics. The advantages of Ga₂O₃ also stem from its availability of single crystal bulk native substrates synthesized from melt, and its well-controllable n-type doping from both bulk growth and thin film epitaxy. Among several thin film growth methods, metalorganic chemical vapor deposition (MOCVD) has been demonstrated as an enabling technology for developing high-quality epitaxy of Ga₂O₃ thin films, (Al_xGa_1−x)₂O₃ alloys, and heterostructures along various crystal orientations and with different phases. This tutorial summarizes the recent progresses in the epitaxial growth of β-Ga₂O₃ thin films via different growth methods, with a focus on the growth of Ga₂O₃ and its compositional alloys by MOCVD. The challenges for the epitaxial development of β-Ga₂O₃ are discussed, along with the opportunities of future works to enhance the state-of-the-art device performance based on this emerging UWBG semiconductor material system. [ABSTRACT FROM AUTHOR]