Back to Search Start Over

One-pot hydrothermal synthesis of 2D–2D MoS2/CdS heterojunctions photocatalysts for photocatalytic H2 production under visible-light irradiation.

Authors :
Ramya, A. Janaki
Shobanadevi, N.
Mangaiyarkarasi, S. P.
Sankar, R.
Source :
Journal of Materials Science: Materials in Electronics; Jun2023, Vol. 34 Issue 17, p1-12, 12p
Publication Year :
2023

Abstract

Promoting the charge separation to improve photocatalytic performance of semiconductor photocatalysts is very important in the field of artificial photosynthesis. Here, a novel MoS<subscript>2</subscript>/CdS 2D–2D ultrathin nanosheet heterostructure was fabricated via a one-pot solvothermal route. The obtained 2D–2D MoS<subscript>2</subscript>/CdS nanojunction has not only provided large contact areas, but also shortened the charge-transport distance, resulting in significantly enhanced photocatalytic H<subscript>2</subscript> evolution property. By optimizing the 2D MoS<subscript>2</subscript> amounts in the heterojunction, the 5 wt% 2D/2D MoS<subscript>2</subscript>/CdS heterojunction displayed the maximal photocatalytic H<subscript>2</subscript> evolution rate of 5566 μmolh<superscript>−1</superscript> g<superscript>−1</superscript> under visible-light irradiation in the presence of lactic acid as the sacrificial reagent, which was 10.1 times higher than that of pristine 2D CdS (516 μmolh<superscript>−1</superscript> g<superscript>−1</superscript>). Based on the photoelectrochemical and photoluminescence spectra tests, it could be deduced that the charge separation and transfer of 2D/2D MoS<subscript>2</subscript>/CdS heterojunction were tremendously improved, and the recombination of photoinduced electron–hole pairs was effectively impeded. Moreover, the 2D MoS<subscript>2</subscript> was used as a co-catalyst to provide the abundant active sites and lower the overpotential for H<subscript>2</subscript> generation reaction. The current work would offer an insight to fabricate the 2D/2D heterojunction photocatalysts for splitting H<subscript>2</subscript>O into H<subscript>2</subscript>. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
34
Issue :
17
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
164391047
Full Text :
https://doi.org/10.1007/s10854-023-10765-4