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数值模拟顶部籽晶溶液生长法制备 单晶碳化硅的研究进展.
- Source :
- Journal of Synthetic Crystals; Jun2023, Vol. 52 Issue 6, p1067-1085, 19p
- Publication Year :
- 2023
-
Abstract
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- Subjects :
- WIDE gap semiconductors
SINGLE crystals
CRYSTAL growth
ELECTRIC breakdown
BUOYANCY
Subjects
Details
- Language :
- Chinese
- ISSN :
- 1000985X
- Volume :
- 52
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Synthetic Crystals
- Publication Type :
- Academic Journal
- Accession number :
- 164635833