Back to Search
Start Over
Surface defect compensation of Ga2O3 thin films N-doped by nitrogen plasma for enhanced electrical performance and luminescence effect.
- Source :
- Journal of Applied Physics; 7/7/2023, Vol. 134 Issue 1, p1-6, 6p
- Publication Year :
- 2023
-
Abstract
- Nitrogen (N) doping engineering is considered a promising approach to achieve p-type conductivity of Ga<subscript>2</subscript>O<subscript>3</subscript> films. However, the defect self-compensation effect has been a major obstacle in this field. In this work, we propose a straightforward and environmentally friendly strategy to obtain a doped surface on β-Ga<subscript>2</subscript>O<subscript>3</subscript> films via nonthermal N plasma-based treatment. By substituting nitrogen with oxygen, acceptor impurity levels are formed near the valence band, and self-trapped exciton recombination occurs, thereby enhancing the luminescence effect related to acceptor defects. Meanwhile, although achieving stable p-type conduction with N dopant acceptors remains challenging, the surface conductive properties are enhanced by the defect compensation of oxygen vacancy (V<subscript>O</subscript>) donor defects. Therefore, detailed investigations into the surface defect compensation of N-doped Ga<subscript>2</subscript>O<subscript>3</subscript> thin films are of great research potential for device applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 134
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 164785500
- Full Text :
- https://doi.org/10.1063/5.0150390