Cite

All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory.

MLA

Wang, Xiaojie, et al. “All-van Der Waals Stacking Ferroelectric Field-Effect Transistor Based on In2Se3 for High-Density Memory.” SCIENCE CHINA Information Sciences, vol. 66, no. 8, Aug. 2023, pp. 1–8. EBSCOhost, https://doi.org/10.1007/s11432-022-3617-2.



APA

Wang, X., Feng, Z., Cai, J., Tong, H., & Miao, X. (2023). All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory. SCIENCE CHINA Information Sciences, 66(8), 1–8. https://doi.org/10.1007/s11432-022-3617-2



Chicago

Wang, Xiaojie, Zeyang Feng, Jingwei Cai, Hao Tong, and Xiangshui Miao. 2023. “All-van Der Waals Stacking Ferroelectric Field-Effect Transistor Based on In2Se3 for High-Density Memory.” SCIENCE CHINA Information Sciences 66 (8): 1–8. doi:10.1007/s11432-022-3617-2.