5G FR2 밴드 기지국용 GaN 평형전력증폭기MMIC.

In this study, a power amplifier, which is an essential component, was implemented for an RF system of a 5G FR2 band base station. The design was verified using NP15-00 0.15-μm-gate GaN-on-SiC HEMT process (Win Semiconductors, Taiwan) with a high power density and excellent frequency characteristics for use in 5G base stations. The manufactured power amplifier integrated circuit was measured in the form of a balanced amplifier using a Lange coupler to improve the input and output reflection characteristics. The measurement results were a small signal gain of 18 dB, output power of 9 W, power-added efficiency of 25 %, and a size of 3.6 mm×3.0 mm² within the frequency range of 27∼29 GHz. [ABSTRACT FROM AUTHOR]