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Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch.
- Source :
- Applied Physics Letters; 7/24/2023, Vol. 123 Issue 4, p1-6, 6p
- Publication Year :
- 2023
-
Abstract
- Understanding the thermal stability and degradation mechanism of β-Ga<subscript>2</subscript>O<subscript>3</subscript> metal-oxide-semiconductor field-effect transistors (MOSFETs) is crucial for their high-power electronics applications. This work examines the high temperature performance of the junctionless lateral β-Ga<subscript>2</subscript>O<subscript>3</subscript> FinFET grown on a native β-Ga<subscript>2</subscript>O<subscript>3</subscript> substrate, fabricated by metal-assisted chemical etching with Al<subscript>2</subscript>O<subscript>3</subscript> gate oxide and Ti/Au gate metal. The thermal exposure effect on threshold voltage (V<subscript>th</subscript>), subthreshold swing (SS), hysteresis, and specific on-resistance (R<subscript>on,sp</subscript>), as a function of temperature up to 298 °C, is measured and analyzed. SS and R<subscript>on,sp</subscript> increased with increasing temperatures, similar to the planar MOSFETs, while a more severe negative shift of V<subscript>th</subscript> was observed for the high aspect-ratio FinFETs here. Despite employing a much thicker epilayer (∼2 μm) for the channel, the high temperature performance of I<subscript>on</subscript>/I<subscript>off</subscript> ratios and SS of the FinFET in this work remains comparable to that of the planar β-Ga<subscript>2</subscript>O<subscript>3</subscript> MOSFETs reported using epilayers ∼10–30× thinner. This work paves the way for further investigation into the stability and promise of β-Ga<subscript>2</subscript>O<subscript>3</subscript> FinFETs compared to their planar counterparts. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 168584107
- Full Text :
- https://doi.org/10.1063/5.0159420