Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices.

MLA

Mahata, Chandreswar, et al. “Improved Synaptic Performances with Tungsten-Doped Indium-Tin-Oxide Alloy Electrode for Tantalum Oxide-Based Resistive Random-Access Memory Devices.” Advanced Composites & Hybrid Materials, vol. 6, no. 4, Aug. 2023, pp. 1–14. EBSCOhost, https://doi.org/10.1007/s42114-023-00713-5.

APA

Mahata, C., Pyo, J., Jeon, B., Ismail, M., Moon, J., & Kim, S. (2023). Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices. Advanced Composites & Hybrid Materials, 6(4), 1–14. https://doi.org/10.1007/s42114-023-00713-5

Chicago

Mahata, Chandreswar, Juyeong Pyo, Beomki Jeon, Muhammad Ismail, Janghyuk Moon, and Sungjun Kim. 2023. “Improved Synaptic Performances with Tungsten-Doped Indium-Tin-Oxide Alloy Electrode for Tantalum Oxide-Based Resistive Random-Access Memory Devices.” Advanced Composites & Hybrid Materials 6 (4): 1–14. doi:10.1007/s42114-023-00713-5.