Super low contact resistance in monolayer MoS2 transistors.

Details

Language :

English

ISSN :

16747348

Volume :

66

Issue :

9

Database :

Complementary Index

Journal :

SCIENCE CHINA Physics, Mechanics & Astronomy

Publication Type :

Academic Journal

Accession number :

169849075

Full Text :

https://doi.org/10.1007/s11433-023-2146-0