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Phase change-regulated nonlinear optical properties of GeSb4Te7 films prepared by RF magnetron sputtering.
- Source :
- Journal of Materials Science: Materials in Electronics; Aug2023, Vol. 34 Issue 24, p1-9, 9p
- Publication Year :
- 2023
-
Abstract
- Novel passive devices such as all-optical diodes and all-optical logic gates require materials with appropriate both saturable and reverse saturable absorption properties. In this work, a series of GeSb<subscript>4</subscript>Te<subscript>7</subscript> films were prepared by radio frequency magnetron sputtering and annealed at different temperatures to induce phase changes. Open-aperture Z-Scan experiments revealed that GeSb<subscript>4</subscript>Te<subscript>7</subscript> films featured a large nonlinear absorption coefficient that varied with the extent of phase change induced by the annealing temperature. To understand the underlying reason, a three-level model was developed to explain the competition between ground-state absorption and excited-state absorption during the process. The large nonlinear absorption coefficient of GeSb<subscript>4</subscript>Te<subscript>7</subscript> films ( β eff = - 20368.90 cm/GW) shows that ternary material demonstrates outstanding nonlinear optical absorption capability. Impressively, the annealing treatment induced microstructural changes in the GeSb<subscript>4</subscript>Te<subscript>7</subscript> films that caused a transition from reverse saturable absorption to saturable absorption, offering great potential for innovative passive nonlinear optical devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 34
- Issue :
- 24
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 170040971
- Full Text :
- https://doi.org/10.1007/s10854-023-11094-2