Comparison between carried-induced optical index, loss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 μm DOS application.

Authors :: Zegaoui, M.
Decoster, D.
Harari, J.
Vilcot, J. P.
Mollot, F.
Magnin, V.
Chazelas, J.
Source :: Electronics Letters (Institution of Engineering & Technology); 5/12/2005, Vol. 41 Issue 10, p613-614, 2p
Publication Year :: 2005
Abstract: Experimentally carrier-induced optical index, propagation excess loss and carrier lifetime variations against injected current in n<superscript>+</superscript>- InP/i-InGaAsP/iInP/p<superscript>+</superscript>-InP heterostructures are investigated. The heterostructures have quaternary bandgap composition of λ<subscript>d</subscript> 1.18 and 1.30 μm, and they were specially designed for 1.55 μm wavelength digital optical switch (DOS) applications. The Q<subscript>130</subscript> based heterostructure shows the best potential for high-performance DOS. [ABSTRACT FROM AUTHOR]

Subjects :: SWITCHING circuits
ELECTRIC currents
DIGITAL electronics
OPTICS
ELECTRIC switchgear
ELECTRONIC circuits

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