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Ab Initio Study of the Properties of Ti2PdFe(Ru)Sb2 Double Half-Heusler Semiconducting Alloys.

Authors :
Diaf, Mohamed
Righi, Haroun
Rached, Habib
Rached, Djamel
Beddiaf, Raouf
Source :
Journal of Electronic Materials; Oct2023, Vol. 52 Issue 10, p6514-6529, 16p
Publication Year :
2023

Abstract

Using ab initio calculations, we studied the structural, mechanical, electronic and thermoelectric properties of the new double half-Heusler alloys, Ti<subscript>2</subscript>PdFeSb<subscript>2</subscript> and Ti<subscript>2</subscript>PdRuSb<subscript>2</subscript>. Our calculations predict stable non-magnetic semiconducting phases with indirect bandgaps of 0.9 eV for Ti<subscript>2</subscript>PdFeSb<subscript>2</subscript> and 0.7 eV for Ti<subscript>2</subscript>PdRuSb<subscript>2</subscript>. The calculated formation energies and elastic constants suggest that both alloys are thermodynamically as well as mechanically stable. A detailed thermoelectric response (S, κ<subscript>e</subscript>, PF, ZT) of the alloys was investigated using semi-classical Boltzmann transport theory as implemented in BoltzTraP2 code. The lattice thermal conductivity κ<subscript>L</subscript> was evaluated through the Slack model and shows a maximum value of 9.46Wm<superscript>−1</superscript> K<superscript>−1</superscript> for Ti<subscript>2</subscript>PdFeSb<subscript>2</subscript> and 7.22Wm<superscript>−1</superscript> K<superscript>−1</superscript> for Ti<subscript>2</subscript>PdFeSb<subscript>2</subscript>, at 900 K. The collected results suggest that both compounds would be potential candidates for thermoelectric applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
52
Issue :
10
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
171345160
Full Text :
https://doi.org/10.1007/s11664-023-10589-2