Nd-doped GdVO4 films prepared by pulsed-laser deposition on SiO2/Si substrate.

Authors :: Dong, Z. G.
Wang, F. Y.
Fan, Y. X.
Lu, P.
Zhu, S. N.
Lim, P. K.
Tang, T. B.
Source :: Applied Physics Letters; 4/11/2005, Vol. 86 Issue 15, p151908, 3p, 4 Graphs
Publication Year :: 2005
Abstract: Nd-doped GdVO<subscript>4</subscript>(Nd:GdVO<subscript>4</subscript>) films with a-axis preferred orientation were fabricated on SiO<subscript>2</subscript>/Si substrate by pulsed-laser deposition. Fluorescences at around 1065.0 and 1342.5 nm, corresponding to <superscript>4</superscript>F<subscript>3/2</subscript>→<superscript>4</superscript>I<subscript>11/2</subscript> and <superscript>4</superscript>F<subscript>3/2</subscript>→<superscript>4</superscript>I<subscript>13/2</subscript> transitions, respectively, were excited simultaneously with an 808 nm diode laser. Waveguide behaviors in the film were investigated by using the prism coupling technique at the wavelength of 632.8 nm. Both TE and TM mode spectra revealed that favorable light confinements were achieved within the Nd:GdVO<subscript>4</subscript> waveguide layer. Additionally, the optically anisotropic properties of the film were studied in detail. [ABSTRACT FROM AUTHOR]