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High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method.
- Source :
- Applied Physics Letters; 9/11/2023, Vol. 123 Issue 11, p1-6, 6p
- Publication Year :
- 2023
-
Abstract
- Hydrogen-terminated diamond surfaces, emerging as a promising two-dimensional (2D) electron platform with great thermal and electronic properties, hold great potential for the next-generation high power and high frequency field effect transistor (FET). However, ideal gate dielectrics with high crystallinity and defect-free surfaces are still largely elusive. In this work, using the contamination-free pickup transfer method, hexagonal boron nitride (h-BN) flakes were fabricated on top of the hydrogen-terminated diamond surface to serve as a gate material and the passivation layer. The morphological and optical characterizations revealed the formation of homogeneous and intimate interface between h-BN and diamond. Benefiting from the h-BN gate dielectric layer, the maximum drain current density, subthreshold swing, and on/off ratio of diamond FET are measured to be −210.3 mA mm<superscript>−1</superscript>, 161 mV/dec, and 10<superscript>6</superscript>, respectively. Especially, the transport measurement shows an almost constant Hall mobility of around 260 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> in the hole density range of 2 − 6 × 10<superscript>12</superscript> cm<superscript>−2</superscript>, suggesting the excellent gate controllability of h-BN. Our results indicate that h-BN could form high-quality interface with hydrogen-terminated diamond, paving the way for the development of diamond-based electronic applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 171987964
- Full Text :
- https://doi.org/10.1063/5.0165596