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The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices.
- Source :
- Applied Physics Letters; 9/11/2023, Vol. 123 Issue 11, p1-6, 6p
- Publication Year :
- 2023
-
Abstract
- In this work, we focused on investigating the transport-limited trapping effects in GaN-on-Si buffer layers as well as impact of the thickness of buffer layers (T<subscript>Buf</subscript>) upon such effects. Vertical transport dynamics of charges within the buffer layers and their key energy levels are quantitatively and statistically investigated and analyzed. The results show that an increased T<subscript>Buf</subscript> diminishes both impurity conduction of the defect band formed by carbon doping as well as the injection of electrons from the substrate, greatly diminishing the current collapse and improving the stability of the device. Such enhancement is mainly attributed to the reduced vertical electric field within the thickened epitaxy, which provides an additional pathway to address the current collapse and yields more efficient power GaN-on-Si devices. [ABSTRACT FROM AUTHOR]
- Subjects :
- BUFFER layers
DOPING agents (Chemistry)
INJECTION wells
CONDUCTION bands
EPITAXY
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 171987966
- Full Text :
- https://doi.org/10.1063/5.0155073