Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.

Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-steep logical switching and low power non-volatile memory functions, have significant potential for post-Moore integrated circuit innovations with higher energy efficiency and larger integration scale. In this review, recent research into hafnium oxide-based ferroelectric (FE) films and different functional devices is presented, from fundamentals to applications. Different technological challenges and state-of-the-art research and development efforts related to the physical understanding and performance optimization of FE films, advanced hafnium oxide-based device integration, and device applications in logic-in-memory and artificial synapses and neurons for neuromorphic computing are addressed. [ABSTRACT FROM AUTHOR]