In Situ Synthesis of Mixed-Phase WO3 on Nitrogen-Doped Graphene with Enhanced Photoelectric Properties.

WO₃/N-rGO composites with a phase-junction structure were prepared by hydrothermal methods. The formation of orthorhombic and monoclinic WO₃ during the in situ synthesis of WO₃ on nitrogen-doped graphene was demonstrated by X-ray diffraction (XRD). X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR) results demonstrated the successful doping of nitrogen atoms in graphene. The effect of N-rGO and phase-junction structure on the photoelectric properties was investigated by photoelectrochemical tests. In the I–t test results, WO₃/N-rGO exhibited a photocurrent density of 0.204 mA/cm², which was 5.8 and 2.6 times higher than those of WO₃ and WO₃/rGO, respectively. The electrochemical impedance spectroscopy (EIS) demonstrated that N-rGO and phase-junction structure reduce the electrochemical impedance of the composites. In the linear sweep voltammetry (LSV) and Mott–Schottky (MS) results, WO₃/N-rGO exhibited the highest photocurrent (3.65 mA/cm²) intensity at 1.23 V bias and the largest carrier density (3.63 × 10²⁰ cm^–3), respectively. Possible electron-transfer mechanisms of the composite materials also have been discussed. [ABSTRACT FROM AUTHOR]