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Effect of the RF Power of PECVD on the Crystalline Fractions of Microcrystalline Silicon (μc-Si:H) Films and Their Structural, Optical, and Electronic Properties.
- Source :
- Electronic Materials; Sep2023, Vol. 4 Issue 3, p110-123, 14p
- Publication Year :
- 2023
-
Abstract
- In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH<subscript>4</subscript>), hydrogen (H<subscript>2</subscript>), and argon (Ar) mixtures using the plasma-enhanced chemical vapor deposition (PECVD) technique at 200 °C. Particularly, we studied the effect of RF power on the crystalline fraction (X<subscript>C</subscript>) of the deposited films, and we have correlated the X<subscript>C</subscript> with their optical, electrical, and structural characteristics. Different types of characterization were performed in the µc-Si:H film series. We used several techniques, such as Raman scattering spectroscopy, Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM), among others. Our results show that RF power had a strong effect on the X<subscript>C</subscript> of the films, and there is an optimal value for producing films with the largest X<subscript>C</subscript>. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 26733978
- Volume :
- 4
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 172394251
- Full Text :
- https://doi.org/10.3390/electronicmat4030009