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Electrical gating of superconducting NbSe2 using SrTiO3-based field-effect transistors.
- Source :
- Applied Physics Letters; 9/25/2023, Vol. 123 Issue 13, p1-6, 6p
- Publication Year :
- 2023
-
Abstract
- We report on electrical gating of superconducting bilayer NbSe<subscript>2</subscript> using dual-gate field-effect transistors constructed by the van der Waals assembly of mechanically exfoliated NbSe<subscript>2</subscript> and SrTiO<subscript>3</subscript> thin films grown by molecular beam epitaxy. Charge carrier doping, but not a pure electric field, was found to induce changes to the superconducting resistive transition, reaching a 190 mK modulation of the critical temperature and excluding the Rashba effect. The phase space for the superconducting state beyond the Pauli limit under in-plane magnetic fields expands when the critical temperature is enhanced. Quantitative comparison with theory suggests the presence of intervalley scattering, which competes with Ising spin–orbit coupling to set the superconducting-normal phase boundary. The gating method demonstrated here may be applied to study other van der Waals layered superconductors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 13
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 172450279
- Full Text :
- https://doi.org/10.1063/5.0167361