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A High‐Entropy‐Oxides‐Based Memristor: Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution.
- Source :
- Advanced Materials; 10/12/2023, Vol. 35 Issue 41, p1-9, 9p
- Publication Year :
- 2023
Details
- Language :
- English
- ISSN :
- 09359648
- Volume :
- 35
- Issue :
- 41
- Database :
- Complementary Index
- Journal :
- Advanced Materials
- Publication Type :
- Academic Journal
- Accession number :
- 172959972
- Full Text :
- https://doi.org/10.1002/adma.202302979