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Evaluation of tin nitride (Sn3N4) via atomic layer deposition using novel volatile Sn precursors.
- Source :
- Dalton Transactions: An International Journal of Inorganic Chemistry; 11/7/2023, Vol. 52 Issue 41, p15033-15042, 10p
- Publication Year :
- 2023
-
Abstract
- Novel Sn precursors, Sn(tbip)<subscript>2</subscript>, Sn(tbtp)<subscript>2</subscript>, and Sn(tbta)<subscript>2</subscript>, were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formation of monomeric Sn L <subscript>2</subscript> with distorted seesaw geometry. Thermogravimetric analysis demonstrated the exceptional volatility of all complexes. Sn(tbtp)<subscript>2</subscript> showed the lowest residual weight of 2.7% at 265 °C. Sn<subscript>3</subscript>N<subscript>4</subscript> thin films were successfully synthesized using Sn(tbtp)<subscript>2</subscript> as the Sn precursor and NH<subscript>3</subscript> plasma. The precursor exhibited ideal characteristics for atomic layer deposition, with a saturated growth per cycle value of 1.9 Å cy<superscript>−1</superscript> and no need for incubation when the film was deposited at 150–225 °C. The indirect optical bandgap of the Sn<subscript>3</subscript>N<subscript>4</subscript> film was approximately 1–1.2 eV, as determined through ultraviolet–visible spectroscopy. Therefore, this study suggests that the Sn<subscript>3</subscript>N<subscript>4</subscript> thin films prepared using the newly synthesized Sn precursor are suitable for application in thin-film photovoltaic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14779226
- Volume :
- 52
- Issue :
- 41
- Database :
- Complementary Index
- Journal :
- Dalton Transactions: An International Journal of Inorganic Chemistry
- Publication Type :
- Academic Journal
- Accession number :
- 173147067
- Full Text :
- https://doi.org/10.1039/d3dt02138f