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Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization.
- Source :
- APL Materials; Oct2023, Vol. 11 Issue 10, p1-10, 10p
- Publication Year :
- 2023
-
Abstract
- HfO<subscript>2</subscript>-based ferroelectric tunnel junctions (FTJs) are promising nonvolatile memory types for neural network applications because of their speed, low power, and excellent complementary metal-oxide semiconductor compatibility. Specifically, HfAlO<subscript>x</subscript> (HAO) has led to extensive research efforts owing to its outstanding ferroelectric performance. This is a result of the fact that the atomic radius of Al is smaller than that of Hf. In this study, we investigate the metal–ferroelectric–semiconductor device with an Al doping concentration of 2% that was annealed at 900 °C. A high-remnant polarization (P<subscript>r</subscript>) value of 39.85 µC/cm<superscript>2</superscript> and endurance were achieved by using the polarization switching positive-up-negative-down measurement method at this annealing condition. Our device shows long-term potentiation and depression properties, including high linearity and multiple conductance states for neuromorphic applications. Moreover, paired-pulse facilitation was implemented to mimic human synaptic functions. The construction of 16 states comprising four bits was achieved by employing reservoir computing with the FTJ device functioning as a physical reservoir. Finally, the results obtained from the experiment show promising outcomes for the ferroelectric memory characteristics and synaptic properties of the manufactured HAO device. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2166532X
- Volume :
- 11
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- APL Materials
- Publication Type :
- Academic Journal
- Accession number :
- 173336181
- Full Text :
- https://doi.org/10.1063/5.0170699