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Systematic Search for Stabilizing Dopants in ZrO₂ and HfO₂ Using First-Principles Calculations.

Authors :
Harashima, Yosuke
Koga, Hiroaki
Ni, Zeyuan
Yonehara, Takehiro
Katouda, Michio
Notake, Akira
Matsui, Hidefumi
Moriya, Tsuyoshi
Si, Mrinal Kanti
Hasunuma, Ryu
Uedono, Akira
Shigeta, Yasuteru
Source :
IEEE Transactions on Semiconductor Manufacturing; Nov2023, Vol. 36 Issue 4, p543-546, 4p
Publication Year :
2023

Abstract

In this study, we performed a systematic search for dopants to stabilize the tetragonal structure of HfO2 and ZrO2 by using high-throughput first-principles calculations. By exhaustively exploring all possible impurity configurations for over 12,000 systems, we obtained the expected most stable doping status for various dopants at different doping levels. The stabilization effect of dopants are investigated and compared. The results show that Si or Ge significantly stabilize the tetragonal phase. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08946507
Volume :
36
Issue :
4
Database :
Complementary Index
Journal :
IEEE Transactions on Semiconductor Manufacturing
Publication Type :
Academic Journal
Accession number :
173369999
Full Text :
https://doi.org/10.1109/TSM.2023.3265658