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Systematic Search for Stabilizing Dopants in ZrO₂ and HfO₂ Using First-Principles Calculations.
- Source :
- IEEE Transactions on Semiconductor Manufacturing; Nov2023, Vol. 36 Issue 4, p543-546, 4p
- Publication Year :
- 2023
-
Abstract
- In this study, we performed a systematic search for dopants to stabilize the tetragonal structure of HfO2 and ZrO2 by using high-throughput first-principles calculations. By exhaustively exploring all possible impurity configurations for over 12,000 systems, we obtained the expected most stable doping status for various dopants at different doping levels. The stabilization effect of dopants are investigated and compared. The results show that Si or Ge significantly stabilize the tetragonal phase. [ABSTRACT FROM AUTHOR]
- Subjects :
- SEMICONDUCTOR doping
DIELECTRIC materials
SEMICONDUCTOR devices
HAFNIUM oxide
Subjects
Details
- Language :
- English
- ISSN :
- 08946507
- Volume :
- 36
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Semiconductor Manufacturing
- Publication Type :
- Academic Journal
- Accession number :
- 173369999
- Full Text :
- https://doi.org/10.1109/TSM.2023.3265658