Effect of SiO 2 Interfacial Layer Reduction on MFSFET With 5 nm-Thick Ferroelectric Nondoped HfO 2 by Deposition Rate Control.

In this research, deposition rate dependence of 5 nm-thick ferroelectric nondoped HfO2 (FeND-HfO2) formed on Si(100) substrate was investigated. The equivalent oxide thickness (EOT) was decreased from 3.2 nm to 2.8 nm by increasing deposition rate of HfO2 from 5.0 nm/min to 6.0 nm/min. The subthreshold swing (SS) of 107 mV/dec. and saturation mobility $(\mu _{\mathrm{ sat}})$ of 150 cm 2/(Vs) were obtained with deposition rate of 6.0 nm/min. Furthermore, the threshold voltage (VTH) was controllable as the number of identical erase pulse of 4 V/ $1~\mu \text{s}$ , which suggested the ${\mathrm{ V}}_{\mathrm{ TH}}$ control of approximately 10 mV. [ABSTRACT FROM AUTHOR]