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Preparation of pH Sensor Based on Extended-Gate Field-Effect Transistor with Spinel ZnCo2O4 Thin Films by Electrostatic Spray Deposition.

Authors :
Keawkusonwiwat, S.
Tunhoo, B.
Onlaor, K.
Thiwawong, T.
Source :
Journal of Electronic Materials; Dec2023, Vol. 52 Issue 12, p8095-8107, 13p
Publication Year :
2023

Abstract

Electrostatic spray deposition was applied to prepare pH sensing with spinel ZnCO<subscript>2</subscript>O<subscript>4</subscript> thin films based on the measurement of extended-gate field-effect transistors (EGFET). The influence of annealing temperatures on the characteristics of the prepared films was analyzed. The structural and morphological properties of the annealed ZnCo<subscript>2</subscript>O<subscript>4</subscript> films were assessed by x-ray diffraction, x-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and contact angle measurement. The effect of the ZnCo<subscript>2</subscript>O<subscript>4</subscript> annealing temperature on the characteristics of pH sensing for the prepared ZnCo<subscript>2</subscript>O<subscript>4</subscript> films in EGFET measurement were examined with pH buffer solutions in a pH range of 2–12 at room temperature. The sensing films annealed at 550°C demonstrated a high voltage and current sensitivity at 67.6 mV/pH and 1.033 (µA)<superscript>½</superscript>/pH, with linearity values of 0.9968 and 0.9991, respectively. Moreover, the annealed 550°C ZnCo<subscript>2</subscript>O<subscript>4</subscript> film exhibited low hysteresis at 4.99 mV and high retention stability. The results revealed that the pH sensing of the ZnCo<subscript>2</subscript>O<subscript>4</subscript> EGFET device showed a super-Nernstian sensitivity, which indicated the influence of the surface properties of the annealed film. Therefore, the ZnCo<subscript>2</subscript>O<subscript>4</subscript> film should be considered a potential option for the pH sensing layer in EGFET applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
52
Issue :
12
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
173396448
Full Text :
https://doi.org/10.1007/s11664-023-10736-9