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Substitutional p‐Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD.
- Source :
- Advanced Materials; Apr2023, Vol. 35 Issue 14, p1-10, 10p
- Publication Year :
- 2023
Details
- Language :
- English
- ISSN :
- 09359648
- Volume :
- 35
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Advanced Materials
- Publication Type :
- Academic Journal
- Accession number :
- 173604354
- Full Text :
- https://doi.org/10.1002/adma.202209371