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Investigation of Microstructure and V-Defect Formation in InxGa1-xN/GaN MQW Grown Using Temperature-Gradient Metalorganic Chemical Vapor Deposition.
- Source :
- Journal of Electronic Materials; May2005, Vol. 34 Issue 5, p605-611, 7p, 1 Diagram, 1 Chart, 5 Graphs
- Publication Year :
- 2005
-
Abstract
- Temperature-gradient metalorganic chemical vapor deposition (MOCVD) was used to deposit In<subscript>x</subscript>Ga<subscript>1-x</subscript>N/GaN multiple quantum well (MQW) structures with a concentration gradient of indium across the wafer. These MQW structures were deposited on low defect density (2 x 10<superscript>8</superscript> cm<superscript>-2</superscript>) GaN template layers for investigation of microstructural properties and V-defect (pinhole) formation. Room temperature (RT) photoluminescence (PL) and photomodulated transmission (PT)were used for optical characterization, which show a systematic decrease in emission energy for a decrease in growth temperature. Triple-axis x-ray diffraction (XRD), scanning electron microscopy, and cross-sectional transmission electron microscopy were used to obtain microstructural properties of different regions across the wafer. Results show that there is a decrease in crystal quality and an increase in V-defect formation with increasing indium concentration. A direct correlation was found between V-defect density and growth temperature due to increased strain and indium segregation for increasing indium concentration. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 34
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 17368152
- Full Text :
- https://doi.org/10.1007/s11664-005-0072-y